Ordering number:ENN1425C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1380/2SC3502
Ultrahigh-Definition CRT Display,...
Ordering number:ENN1425C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1380/2SC3502
Ultrahigh-Definition CRT Display, Video Output Applications
Features
· High breakdown
voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent
high-frequnecy characteristics
: Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. · Adoption of FBET process
Package Dimensions
unit:mm
2009B
[2SA1380/2SC3502]
8.0 4.0
2.7
1.5 3.0 7.0
11.0
1.6 0.8
0.8
0.6
3.0
0.5
15.5
( ) : 2SA1380
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse)
Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO
IC ICP
PC
Tj Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)150V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(...
