C3503

Ordering number:EN1426B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1381/2SC3503 High-Definition CRT Display, Video Output Applications Features Package Dimensions unit:mm 2009A [2SA1381/2SC3503] · High breakdown voltage : VCEO≥300V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. · Adoption of MBIT process. JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions B : Base C : Collector E : Emitter Ratings (–)300 (–)300 (–)5 (–)100 (–)200 1.2 Unit V V V mA mA W W Tc=25˚C Tj Tstg 7 150 –55 to +150 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Base-to-Emitter Breakdown Votage Symbol ICBO IEBO hFE fT Cob Cre VCE(sat) VBE(sat) VCB=(–)200V, IE=0 VEB=(–)4V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)30V, IC=(–)10mA VCB=(–)30V, f=1MHz VCB=(–)30V, f=1MHz IC=(–)20mA, IB=(–)2mA (–)300 (–)300 (–)5 40* 150 2.6 (3.1) 1.8 (2.3) (–)0.6 (–)1.0 IC=(–)20mA, IB=(–)2mA V(BR)CBO I...