DATA SHEET
SILICON POWER TRANSISTOR
2SC3518-Z
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3518-Z is designed f...
DATA SHEET
SILICON POWER TRANSISTOR
2SC3518-Z
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.
FEATURES
High DC Current Gain hFE = 100 to 400 Low VCE(sat): VCE(sat) = 0.09 V TYP. Complement to 2SA1385-Z
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base
Voltage
VCBO
Collector to Emitter
Voltage
VCEO
Emitter to Base
Voltage
VEBO
Collector Current (DC) Collector Current (pulse) Note 1 Total Power Dissipation (TA = 25°C) Note 2
IC(DC) IC(pulse)
PT
Junction Temperature
Tj
Storage Temperature
Tstg
60 60 7 5 7 2.0 150 −55 to +150
V V V A A W °C °C
PACKAGE DRAWING (Unit: mm)
6.5 ±0.2 5.0 ±0.2 4.4 ±0.2
4
Note
1.5
+0.2 −0.1
2.3 ±0.2 0.5 ±0.1 Note
1.0 ±0.5 0.4 MIN. 0.5 TYP.
2.5 ±0.5
5.6 ±0.3 9.5 ±0.5
5.5 ±0.2
123
2.3 ±0.3
0.5 ±0.1 2.3 ±0.3
0.5 ±0.1 0.15 ±0.15
TO-252 (MP-3Z)
1. Base 2. Collector 3. Emitter 4. Collector Fin
Note The depth of notch at the top of the fin is from 0 to 0.2 mm.
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D18263EJ3V0DS00 (3rd edition)
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