TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3710A
2SC3710A
High-Power Switching Applications
Unit:...
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3710A
2SC3710A
High-Power Switching Applications
Unit: mm
Low collector saturation
voltage: VCE (sat) = 0.4 V (max) High-speed switching: tstg = 1.0 μs (typ.) Complementary to 2SA1452A
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
VCBO 80 V
Collector-emitter
voltage
VCEO 80 V
Emitter-base
voltage
VEBO 6 V
Collector current
IC 12 A
Base current
IB 2 A
Collector power dissipation (Tc = 25°C)
PC 30 W
JEDEC
―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA TOSHIBA
― 2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-12-21
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown
voltage
DC current gain
Collector-emitter saturation
voltage Base-em...
