INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3783
DESCRIPTION ·High Collector-...
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3783
DESCRIPTION ·High Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 800V(Min) ·High Switching Speed
APPLICATIONS ·High speed and high
voltage switching applications. ·Switching regulator applications. ·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
900 V
VCEO
Collector-Emitter
Voltage
800 V
VEBO
Emitter-Base
voltage
7V
IC Collector Current-Continuous 5 A
ICM Collector Current-Pulse
7A
IB Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
3A
100 W
150 ℃
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3783
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Coll...