Ordering number:ENN1858B
NPN Epitaxial Planar Silicon Transistor
2SC3792
High hFE, Low-Frequency General-Purpose Amplif...
Ordering number:ENN1858B
NPN Epitaxial Planar Silicon Transistor
2SC3792
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
· Low frequency general-purpose
amplifiers, drivers, muting circuits.
Features
· Adoption of FBET process. · High DC current gain. · High VEBO (VEBO≥25V). · High reverse hFE (150 typ). · Small ON resistance [Ron=1Ω (IB=5mA)]
Package Dimensions
unit:mm 2003B
[2SC3792]
5.0 4.0
4.0
0.45 0.5
0.45 0.44
0.6 2.0 14.0 5.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance
Symbol
Conditions
ICBO IEBO hFE
fT Cob
VCB=40V, IE=0 VEB=20V, IC=0 VCE=5V, IC=10mA VCE=10V, IC=10mA VCB=10V, f=1MHz
123 1.3 1.3
1 : Emitter 2 : Collector 3 : Base SANYO : NP
Ratings 50 20 25
500 800 100 500 150 –55 to +150
Unit V V V mA mA mA
mW ˚C ˚C
Ratings min typ max
Unit
0.1 µA
0.1 µA
300 1200
250 MHz
4.0 pF
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, ...