TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3803
High Frequency Amplifier Applications Video Amplifie...
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3803
High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications
2SC3803
Unit: mm
High transition frequency: fT = 200 MHz (typ.) Low collector output capacitance: Cob = 3.5 pF (typ.) Complementary to 2SA1483
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Continuous collector current Continuous base current
Collector power dissipation
Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC PC (Note 1)
Tj Tstg
60 45 5 200 50 500
1000
150 −55 to 150
V V V mA mA
mW
°C °C
PW-MINI JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1 2009-12-21
Electrical Characteristics (Ta = 25°C)
2SC3803
Ch...