2SC3833
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : ...
2SC3833
Silicon NPN Triple Diffused Planar Transistor (High
Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg
2SC3833 500 400 10
12(Pulse24) 4
100(Tc=25°C) 150
–55 to +150
Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB
Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=–1A VCB=10V, f=1MHz
(Ta=25°C)
2SC3833 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 105typ
Unit µA µA V
V V MHz pF
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) (Ω) (A) (V) (V) (A)
200 28.5
7
10 –5 0.7
IB2 (A)
–1.4
ton (µs)
1.0max
tstg (µs)
3.0max
tf (µs)
0.5max
External Dimensions MT-100(TO3P)
15.6±0.4 9.6
4.8±0.2 2.0±0.1
1.8 5.0±0.2
19.9±0.3 4.0 2.0
20.0min 4.0max
a ø3.2±0.1 b
2 3 1.05 +-00..12
0.65
+0.2 -0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Type No.
b. Lot No.
DC Current Gain hFE
Collector Current IC(A)
I C– V CE Characteristics (Typical)
12 1000mA
10 800mA 600mA
8 400mA
6
200mA 4
IB=100mA 2
0 0 1 2 34 Collector-Emitter
Voltage VCE(V)
Collector-Emitter Saturation
Voltage VCE(sat)(V) Base-Emitter Saturation
Voltage VBE(sat)(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
(IC/IB=5)
1 –55˚C (Case Temp) 25˚C (Case Temp) 125˚C (Case Temp)
VBE(sat)
VCE(sat)
125˚C
–5 5 ˚ C
0...
