2SC3834
Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol ...
2SC3834
Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3834 200 120 8 7(Pulse14) 3 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Humidifier, DC-DC Converter, and General Purpose
(Ta=25°C) 2SC3834 100max 100max 120min 70 to 220 0.5max 1.2max 30typ 110typ V MHz pF
2.5 B C E 12.0min 4.0max
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=8V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.3A IC=3A, IB=0.3A VCE=12V, IE=–0.5A VCB=10V, f=1MHz
External Dimensions MT-25(TO220)
3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1
Unit
µA µA
V
16.0±0.7 8.8±0.2
a b
ø3.75±0.2
V
1.35
0.65 +0.2 -0.1 2.5 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 50 RL (Ω) 16.7 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.3 IB2 (A) –0.6 ton (µs) 0.5max tstg (µs) 3.0max tf (µs) 0.5max
Weight : Approx 2.6g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
Collector-Emitter Saturation
Voltage V CE(s a t) (V ) 7
200 mA
V CE ( sat ) – I B Characteristics (Typical)
2.6
I C – V BE Temperature Characteristics (Typical)
7 (V C E =4V)
150
mA mA
6
100
6 Collector Current I C (A) 2
Collector Current I C (A)
5
60mA
40m A
5
4
4
p) Tem
mp) (Cas e Te
(Ca
1
se
3
20 mA
3
˚C
1
1 0 0.005 0.01
0
0
1
2
3
4
0.05
0.1
0.5
1
0
0
–30˚C
I B =10mA
25˚C
125
2
2
(Case
Temp
5A
)
3A
I C= 1 A
0.5 Base-Emittor Voltag...
