C3875

2SC3875 NPN Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR SOT-23 Collector-Emitter Voltage: VCEO = 50V Collector Dissipation: PC = 150mW Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG 60 50 5 150 150 150 -55~+150 V V V mA mW oC oC Tolerance : 0.1mm Dimensions (Unit : mm) 1. Emitter 2. Base 3. Collector Electrical Characteristics (TA=25oC) Characteristic Symbol Test Conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT IC= 100µA, IE= 0 IC= 1mA, IB= 0 IE= 100µA, IC= 0 VCB= 60V, IE= 0 VCE= 45V, IB= 0 VEB= 5V, IC= 0 VCE= 6V, IC= 2mA IC= 100mA, IB= 10mA IC= 100mA, IB= 10mA VCE= 10V, IC= 1mA f= 100MHz Min Max Unit 60 V 50 V 5V 0.1 µA 0.2 µA 0.1 µA 70 700 0.25 V 1V 80 MHz hFE CLASSIFICATION Classification G hFE 70-140 Y 120-240 GR 200-400 BL 350-700 Device Marking 2SC3875-G=ALO ; 2SC3875-Y=ALY ; 2SC3875-GR=ALG ; 2SC3875-G=ALL Elite Enterprises (H.K.) Co., Ltd. Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K. Tel: (852) 2723-3122 Fax: (852)...