Ordering number:EN4097
NPN Triple Diffused Planar Silicon Transistor
2SC3896
Ultrahigh-Definition CRT Display Horizonta...
Ordering number:EN4097
NPN Triple Diffused Planar Silicon Transistor
2SC3896
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High reliability (Adoption of HVP process).
· High breakdown
voltage (VCBO=1500V). · Adoption of MBIT process.
Package Dimensions
unit:mm 2039D
[2SC3896]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Collector-to-Emitter Sastain
Voltage Emitter Cutoff Current Collector-to-Emitter Saturation
Voltage Base-to-Emitter Saturation
Voltage
ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat)
VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 IC=6A, IB=1.5A IC=6A, IB=1.5A
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML
Ratings 1500 800 6 8 25 3.0 70 150
–55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ
800
max 10 1.0
1.0 5
1.5
Unit
µA mA V mA V V
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably ...