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C3918 Datasheet

Part Number C3918
Manufacturers Sanyo
Logo Sanyo
Description 2SC3918
Datasheet C3918 DatasheetC3918 Datasheet (PDF)

Ordering number:EN2164A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1524/2SC3918 Switching Applications (with Bias Resistance) Applications · Switching circuits, inverter circuits, interface circuits, driver circuits. Features · On-chip bias resistance : R1=2.2kΩ, R2=10kΩ. · Small-sized package : SPA. · Large current capacity : IC=500mA. Package Dimensions unit:mm 2033 [2SA1524/2SC3918] ( ) : 2SA1524 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Volta.

  C3918   C3918






Part Number C3919
Manufacturers Sanyo
Logo Sanyo
Description 2SC3919
Datasheet C3918 DatasheetC3919 Datasheet (PDF)

Ordering number:EN2149A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1525/2SC3919 Switching Applications (with Bias Resistance) Applications · Switching circuits, inverter circuits, interface circuits, driver circuits. Features · On-chip bias resistance : R1=2.2kΩ, R2=2.2kΩ. · Small-sized package : SPA. · Large current capacity : IC=500mA. Package Dimensions unit:mm 2033 [2SA1525/2SC3919] ( ) : 2SA1525 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-.

  C3918   C3918







Part Number C3917
Manufacturers Sanyo
Logo Sanyo
Description 2SC3917
Datasheet C3918 DatasheetC3917 Datasheet (PDF)

Ordering number:EN2163A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1523/2SC3917 Switching Applications (with Bias Resistance) Applications · Switching circuits, inverter circuits, interface circuits, driver circuits. Features · On-chip bias resistance : R1=4.7kΩ, R2=4.7kΩ. · Small-sized package : SPA. · Large current capacity : IC=500mA. Package Dimensions unit:mm 2033 [2SA1523/2SC3917] ( ) : 2SA1523 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Volt.

  C3918   C3918







Part Number C3916
Manufacturers Sanyo
Logo Sanyo
Description 2SC3916
Datasheet C3918 DatasheetC3916 Datasheet (PDF)

Ordering number:EN2162A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1522/2SC3916 Switching Applications (with Bias Resistance) Applications · Switching circuits, inverter circuits, interface circuits, driver circuits. Features · On-chip bias resistance : R1=10kΩ, R2=10kΩ. · Small-sized package : SPA. · Large current capacity : IC=500mA. Package Dimensions unit:mm 2033 [2SA1522/2SC3916] ( ) : 2SA1522 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltag.

  C3918   C3918







Part Number C3915
Manufacturers Sanyo
Logo Sanyo
Description 2SC3915
Datasheet C3918 DatasheetC3915 Datasheet (PDF)

Ordering number:EN2166 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1521/2SC3915 Switching Applications (with Bias Resistance) Applications · Swicthing circuits, inverter circuits, interface circuits, dirver circuits. Features · On-chip bias resistance : R1=2.2kΩ, R2=2.2kΩ. · Small-sized package : CP. · Large current capacity : IC=500mA. Package Dimensions unit:mm 2018A [2SA1521/2SC3915] ( ) : 2SA1521 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Volta.

  C3918   C3918







2SC3918

Ordering number:EN2164A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1524/2SC3918 Switching Applications (with Bias Resistance) Applications · Switching circuits, inverter circuits, interface circuits, driver circuits. Features · On-chip bias resistance : R1=2.2kΩ, R2=10kΩ. · Small-sized package : SPA. · Large current capacity : IC=500mA. Package Dimensions unit:mm 2033 [2SA1524/2SC3918] ( ) : 2SA1524 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol Conditions ICBO ICEO IEBO hFE fT VCB=(–)40V, IE=0 VCE=(–)40V, IB=0 VEB=(–)5V, IC=0 VCE=(–)5V, IC=(–)10mA VCE=(–)10V, IC=(–)5mA Output Capacitance Cob VCB=(–)10V, f=1MHz Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Input OFF-State Voltage Input ON-State Voltage Input Resistance Resistance Ratio VCE(sat) V(BR)CBO V(BR)CEO VI(off) VI(on) R1 IC=(–)50mA, IB=(–)2.5mA IC=(–)10µA, IE=0 IC=(–)100µA, RBE=∞ VCE=(–)5V, IC=(–)100µA VCE=(–)0.2V, IC=(–)50mA R1/R2 B : Base C : Collector E : Emitter SANYO : SPA Ratings (–)50 (–)50 (–)6 (–)500 (–)800 300 150 –55 to +1.


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