Diode. C3D06065I Datasheet

C3D06065I Datasheet PDF


Part C3D06065I
Description Silicon Carbide Schottky Diode
Feature C3D06065I Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 650-Volt Schottky Rectifier .
Manufacture CREE
Datasheet
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C3D06065I Silicon Carbide Schottky Diode Z-Rec® Rectifier F C3D06065I Datasheet




C3D06065I
C3D06065I
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
650-Volt Schottky Rectifier
Ceramic Package Provides 2.5kV Isolation
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching Behavior
Positive Temperature Coefficient on VF
Benefits
Electrically Isolated Package
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter Stages
AC/DC converters
Package
VRRM =
IF (TC=135˚C) =
Qc =
650 V
6A
15 nC
TO-220 Isolated
PIN 1
PIN 2
CASE
Part Number
Package
C3D06065I
Isolated TO-220-2
Marking
C3D06065I
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol Parameter
Value Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
650
VRSM
Surge Peak Reverse Voltage
650
VDC DC Blocking Voltage
IF Continuous Forward Current
IFRM Repetitive Peak Forward Surge Current
IFSM Non-Repetitive Peak Forward Surge Current
IF,Max
Non-Repetitive Peak Forward Surge Current
Ptot Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TO-220 Mounting Torque
650
13
6
24
16
63
49
540
460
45.5
19.5
-55 to
+175
1
8.8
V
V
V
A
TC=25˚C
TC=135˚C
A
TC=25˚C, tP = 10 ms, Half Sine Wave
TC=110˚C, tP = 10 ms, Half Sine Wave
A
TC=25˚C, tp = 10 ms, Half Sine Wave
TC=110˚C, tp = 10 ms, Half Sine Wave
A
TC=25˚C, tP = 10 µs, Pulse
TC=110˚C, tP = 10 µs, Pulse
W
TC=25˚C
TC=110˚C
˚C
Nm
lbf-in
M3 Screw
6-32 Screw
Note
Fig. 3
Fig. 8
Fig. 8
Fig. 4
1 C3D06065I Rev. B, 01-2016



C3D06065I
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.5
2.0
8
15.5
15
295
28.5
25.5
1.7
2.4
40
160
V
IF = 6 A TJ=25°C
IF = 6 A TJ=175°C
μA
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
VR = 400 V, IF = 6 A
nC di/dt = 500 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
2.3
μJ VR = 400 V
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Thermal Characteristics
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
3.3
Unit
°C/W
Note
Fig. 9
Typical Performance
14
12 TJ = -55 °C
TJ = 25 °C
10
TJ = 75 °C
8 TJ = 125 °C
6 TJ = 175 °C
4
2
0
0 02.00 0 0 .5 400 1 .0 6010.5 820.00 21.5000 3 . 0 12003 .5 4.0
FowardVVFo(ltVag)e, VF (V)
Figure 1. Forward Characteristics
2 C3D06065I Rev. B, 01-2016
20
16
12 TJ = 175 °C
TJ = 125 °C
8 TJ = 75 °C
TJ = 25 °C
4 TJ = -55 °C
0
0 100 200 300 400 500 600 700 800 900 1000
ReverseVVRol(taVge), VR (V)
Figure 2. Reverse Characteristics






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