C3M0045065K

C3M0045065K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Drain (Pin 1, TAB) Features C3MTM Silicon Carbide (SiC) MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, products received may be marked with either the Cree name and/or logo or the Wolfspeed name and/or logo. Ordering Part Number C3M0045065K Package TO 247-4 Marking C3M0045065K Applications EV chargers Server & Telecom PSU UPS Solar inverters SMPS DC/DC converters Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Key Parameters Parameter Symbol Min. Typ. Max Unit Conditions Drain - Source Voltage Maximum Gate - Source Voltage Operational Gate-Source Voltage VDS 650 VGS(max) -8 +19 V VGS op -4/15 TC = 25°C Transient Static DC Continuous Drain Current ID Pulsed Drain Current Power Dissipation Operating Junction and Storage Temperature ...