C3M0065100J

C3M0065100J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features TAB Drain Drain (TAB) C3MTM SiC MOSFET technology Low parasitic inductance with separate driver source pin 7mm of creepage distance between drain and source High blocking voltage with low On-resistance Fast intrinsic diode with low reverse recovery (Qrr) Low output capacitance (60pF) Halogen free, RoHS compliant 1234567 G KS S S S S S Part Number Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Package Marking C3M0065100J TO 263-7 C3M0065100J Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, products received may be marked with either the Cree name and/or logo or the Wolfspeed name and/or logo. Applications Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Increase power density Increase system switching frequency Key Parameters Parameter Drain - Source Voltage Maximum Gate - Source Voltage Operational Gate-Source Voltage DC Continuous Drain Current Symbol VDS VGS(max) VGS op Min. -8 ID Pulsed Drain Current Avalanche energy, Single pulse Power Dissipation Operating Junction and Storage Temperature Solder Temperature IDM EAS PD TJ, Tstg TL Typ. -4...