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C4160 Datasheet

Part Number C4160
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 2SC4160
Datasheet C4160 DatasheetC4160 Datasheet (PDF)

Ordering number:ENN2481C NPN Triple Diffused Planar Silicon Transistor 2SC4160 400V/4A Switching Regulator Applications Features · High breakdown voltage. · High reliability. · Fast switching speed (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4160] 10.0 3.2 3.5 7.2 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 2.55 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter C.

  C4160   C4160






Part Number C4169
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 2SC4169
Datasheet C4160 DatasheetC4169 Datasheet (PDF)

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

  C4160   C4160







Part Number C4168
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 2SC4168
Datasheet C4160 DatasheetC4168 Datasheet (PDF)

Ordering number:EN2479A Features · Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Package Dimensions unit:mm 2018A [2SA1607/2SC4168] ( ) : 2SA1607 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Ju.

  C4160   C4160







Part Number C4163
Manufacturers Sanyo
Logo Sanyo
Description 2SC4163
Datasheet C4160 DatasheetC4163 Datasheet (PDF)

Ordering number:ENN2484B NPN Triple Diffused Planar Silicon Transistor 2SC4163 400V/12A Switching Regulator Applications Features · High breakdown voltage and high reliability. · High-speed switching (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4163] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Vo.

  C4160   C4160







Part Number C4162
Manufacturers Sanyo
Logo Sanyo
Description 2SC4162
Datasheet C4160 DatasheetC4162 Datasheet (PDF)

Ordering number:ENN2483A NPN Triple Diffused Planar Silicon Transistor 2SC4162 400V/10A Switching Regulator Applications Features · High breakdown voltage, high reliability. · High-speed switching (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4162] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 Specifications 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.7 1 : Base 2 : Collector 3 : Emitter SANYO : T.

  C4160   C4160







Part Number C4161
Manufacturers Sanyo Semiconductor Corporation
Logo Sanyo Semiconductor Corporation
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet C4160 DatasheetC4161 Datasheet (PDF)

Ordering number:ENN2482 NPN Triple Diffused Planar Silicon Transistor 2SC4161 400V/7A Switching Regulator Applications Features · High breakdown voltage, high reliability. · High-speed switching (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4161] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 2.55 Absolute Maximum Ratings at Ta = 25˚C Parameter Col.

  C4160   C4160







2SC4160

Ordering number:ENN2481C NPN Triple Diffused Planar Silicon Transistor 2SC4160 400V/4A Switching Regulator Applications Features · High breakdown voltage. · High reliability. · Fast switching speed (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4160] 10.0 3.2 3.5 7.2 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 2.55 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions 2.55 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Ratings 500 400 7 4 Unit V V V A A A W W PW≤300µs, duty cycle≤10% 8 1.5 2 Tc=25˚C 25 150 –55 to +150 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1* hFE2 hFE3 VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.4A VCE=5V, IC=2A VCE=5V, IC=10mA 15 10 10 Conditions Ratings min typ max 10 10 50 Unit µA µA * : The hFE1 of the 2SC4160 is classified as follows. When specifying the hFE1 rank, specify two or more ranks in principle. Continued on next page. Rank hFE 15 L to 30 20 M to 40 30 N to 50 Any and all SANYO products described or contained herein do not have specifications that can .


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