C4369

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SC4369 DESCRIPTION ·With TO-220F package ·Complement to type 2SA1658 ·Good linearity of hFE APPLICATIONS ·For general purpose applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage Open emitter VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector IC Collector current IB Base current PC Collector dissipation Tj Junction temperature TC=25 Tstg Storage temperature VALUE 30 30 5 3 0.3 15 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SC4369 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A VBE Base-emitter on voltage IC=0.5A ; VCE=2V ICBO Collector cut-off current IEBO Emitter cut-off current hFE-1 DC current gain hFE-2 DC current gain VCB=20V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=2.5A ; VCE=2V fT Transition frequency IC=0.5A ; VCE=2V MIN TYP. MAX UNIT 30 V 0.8 V 1.0 V 1.0 µA 1.0 µA 70 240 25 100 MHz hFE-1 Classifications OY 70-140 120-240 2 SavantIC Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE Product Specification 2SC4369 Fig.2 Outline dimensions 3 ...