2SC4466
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693) sAbsolute maximum ratings (Ta=25°C)
S...
2SC4466
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4466 120 80 6 6 3 60(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) 2SC4466 10max 10max 80min 50min∗ 1.5max 20typ 110typ V pF
20.0min 4.0max
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=120V VEB=6V IC=50mA VCE=4V, IC=2A IC=2A, IB=0.2A VCE=12V, IE=–0.5A VCB=10V, f=1MHz
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
Unit
µA µA
19.9±0.3
4.0
V
a b
ø3.2±0.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
O(50 to100), P(70 to140), Y(90 to180)
5.45±0.1 B C E
sTypical Switching Characteristics (Common Emitter)
VCC (V) 30 RL (Ω) 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.3 IB2 (A) –0.3 ton (µs) 0.16typ tstg (µs) 2.60typ tf (µs) 0.34typ
5.45±0.1
Weight : Approx 6.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
0m A
15 0m A
1 m 00 A
A 80m
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation
Voltage V C E (s at) (V ) 3
I C – V BE Temperature Characteristics (Typical)
6 (V C E =4V)
6
20
Collector Current I C (A)
50 mA
Collector Current I C (A)
4
2
4
30mA
mp) p)
e Te
Cas
I C =6A 4A 2A 0 0 0.5 1.0 1.5 0 0
0
0
1
2
3
4
–30˚C
25˚C
125
I B =10mA
˚C (
(Cas
(Case
2
20mA
1
2
e Tem
1 Base-Emittor
Voltage V B E (V)
Temp
)
2
...
