2SC4704
Silicon NPN Epitaxial High Frequency Amplifier
Feature
• Excellent high frequency characteristics fT = 300 MHz ...
2SC4704
Silicon NPN Epitaxial High Frequency Amplifier
Feature
Excellent high frequency characteristics fT = 300 MHz typ
High
voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ
Suitable for wide band video amplifier Complementary pair of 2SA1810
TO-126 MOD
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol Rating Unit
————————————————————–
Collector to base
voltage VCBO 200 V ————————————————————–
Collector to emitter
voltage VCEO 200 V ————————————————————–
Emitter to base
voltage
VEBO 4
V
————————————————————–
Collector current
IC
0.2 A
————————————————————–
Collector peak current
iC(peak) 0.5 A
————————————————————–
Collector power dissipation PC
1.25 W
——————
PC*1
10
————————————————————–
Junction temperature
Tj
150 °C
————————————————————–
Storage temperature
Tstg –55 to °C
+150
————————————————————–
Note: 1. Value at TC = 25°C.
123
1. Emitter 2. Collector 3. Base
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test condition
———————————————————————————————————————————
Collector to base breakdown
voltage
V(BR)CBO 200 — — V
IC = 10 µA, IE = 0
———————————————————————————————————————————
Collector to emitter breakdown
voltage V(BR)CEO 200 — — V
IC = 1 mA, RBE = ∞
———————————————————————————————————————————
Emitter to base breakdown
voltage
V(BR)EBO 4
——V
IE = 10 µA, IC = 0
———————————————————————————————————————————
Collector cutoff current
ICBO
— — 10 µA VCB = 160 V, IE = 0
———...