DatasheetsPDF.com

C4767 Datasheet

Part Number C4767
Manufacturers Panasonic
Logo Panasonic
Description 2SC4767
Datasheet C4767 DatasheetC4767 Datasheet (PDF)

Productnnua 2.3±0.2 Transistor 2SC4767 Silicon NPN epitaxial planer type For high-frequency power amplification s Features q High transition frequency fT. q Output of 0.6W is obtained in the VHF band (f=175MHz). s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings.

  C4767   C4767






Part Number C4769
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 2SC4769
Datasheet C4767 DatasheetC4769 Datasheet (PDF)

Ordering number:EN3665 NPN Triple Diffused Planar Silicon Transistor 2SC4769 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC4769] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 w w w . D a t a S h e e t 4 U . c o m 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Speci.

  C4767   C4767







Part Number C4763
Manufacturers JMnic
Logo JMnic
Description 2SC4763
Datasheet C4767 DatasheetC4763 Datasheet (PDF)

www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter www.jmnic.com 2SC4763 Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO.

  C4767   C4767







Part Number C4762
Manufacturers JMnic
Logo JMnic
Description 2SC4762
Datasheet C4767 DatasheetC4762 Datasheet (PDF)

www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter www.jmnic.com 2SC4762 Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO.

  C4767   C4767







2SC4767

Productnnua 2.3±0.2 Transistor 2SC4767 Silicon NPN epitaxial planer type For high-frequency power amplification s Features q High transition frequency fT. q Output of 0.6W is obtained in the VHF band (f=175MHz). s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 36 16 3 0.5 0.3 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 13.5±0.5lifecycleen 0.7±0.2dce/ 8.0±0.2 stage. 5.0±0.2 Unit: mm 4.0±0.2 0.7±0.1 1.27 +0.15 0.45 –0.1 +0.15 0.45 –0.1 1.27 123 2.54±0.15 1:Emitter 2:Collector 3:Base TO–92NL Package s Electrical Characteristics (Ta=25˚C) Parameter Symbol Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance High-frequency output Ov.


2017-02-28 : NSTB60BDW1    RWP03040-10    HSD050IDW1-A20    HSD070I651-F01    HSD070I651-A    HSD070IDW1-D00    HSD070ISN1-A00    HSD070IDW1-E    HSD070PFW1-A    HSD070PFW3-A00   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)