C4913

2SC4913 Silicon NPN Triple Diffused Application High voltage amplifier Features High breakdown voltage V(BR)CEO = 2000 V min Outline TO-220AB 1 23 1. Base 2. Collector (Flange) 3. Emitter 2SC4913 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC I C(peak) PC Tj Tstg Ratings 2000 2000 6 20 40 1.5 150 –55 to +150 Unit V V V mA mA W °C °C Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Symbol I CES I CEO I EBO hFE VCE(sat) Min — — — 10 — Typ — — — — — Max Unit 500 µA 5 mA 500 µA — 5.0 V Test conditions VCE = 2000 V, RBE = 0 VCE = 2000 V, RBE = ∞ VEB = 6 V, IC = 0 VCE = 5 V, IC = 1 mA IC = 10 mA, IB = 2 mA Collector Power Dissipation Pc (W) Collector Current I C (mA) Maximum Collector Power Dissipation Curve 2.0 1.5 1.0 0.5 0 50 100 150 200 Ambient Temperature Ta (°C) Area of Safe Operation 100 50 ic(peak) 1 shot pulse Ta = 25°C Pw =1 10 20 I Cmax 10 0.5 ms mDs C(TcO=pe2r5a°tiCon) 0.2 0.1 100 200 500 1000 2000 5000 Collector to Emitter Voltage VCE (V) 2 Collector Current I C (mA) Typical Output Characteristics 10 1 mA 0.8 mA 0.6 mA 5 0.4 mA 0.2 mA IB= 0 0 5 10 Collector to Emitter Voltage VCE (V) Collector to E...