Transistors
2SC5026
Silicon NPN epitaxial planar type
For low-frequency output amplification Complementary to 2SA1890
...
Transistors
2SC5026
Silicon NPN epitaxial planar type
For low-frequency output amplification Complementary to 2SA1890
4.5±0.1 1.6±0.2
Unit: mm
1.5±0.1
■ Features
2.5±0.1 3˚
4.0–+00..2205
Low collector-emitter saturation
voltage VCE(sat)
High collector-emitter
voltage (Base open) VCEO Mini Power type package, allowing downsizing of the equip-
ment and automatic insertion through the tape packing and the magazine packing
1 0.4±0.08
1.5±0.1
23 0.5±0.08
3˚
1.0–+00..21
0.4±0.04
/ ■ Absolute Maximum Ratings Ta = 25°C
e pe) Parameter
Symbol Rating
Unit
2.6±0.1
0.4 max.
45˚ 3.0±0.15
c e. d ty Collector-base
voltage (Emitter open) VCBO
80
V
n d stag tinue Collector-emitter
voltage (Base open) VCEO
80
V
a e cle con Emitter-base
voltage (Collector open) VEBO
5
V
lifecy , dis Collector current
IC
1
A
n u duct typed Peak collector current
ICP
1.5
A
te tin Pro ed Collector power dissipation *
PC
1
W
four ntinu Junction temperature
Tj
150
°C
ing isco Storage temperature
Tstg −55 to +150 °C
Marking Symbol: 2A
1: Base 2: Collector 3: Emitter MiniP3-F1 Package
in n follow ed d Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness es plan Absolute maximum rating without heat sink for PC is 0.5 W
a o includ type, ■ Electrical Characteristics Ta = 25°C ± 3°C
c ued nce Parameter
Symbol
Conditions
Min Typ Max Unit
M is ntin tena Collector-base
voltage (Emitter open) VCBO IC = 10 µA, IE = 0
80
isco ain C...
