KSC5027
KSC5027
High Voltage and High Reliability
• High Speed Switching • Wide SOA
1
TO-220
1.Base 2.Collector 3.E...
KSC5027
KSC5027
High
Voltage and High Reliability
High Speed Switching Wide SOA
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO VCEO VEBO IC ICP IB PC TJ TSTG
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation ( TC=25°C) Junction Temperature Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO VCEX(sus)
ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT tON tSTG tF
Parameter Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage Collector-Emitter Sustaining
Voltage
Collector Cut-off Current Emitter Cut-off Current DC Current Gain
Collector-Emitter Saturation
Voltage Base-Emitter Saturation
Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time
Test Condition
IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 1.5A, IB1 = -IB2 = 0.3A L = 2mH, Clamped
VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.2A VCE = 5V, IC = 1A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 0.2A VCC = 400V IC = 5IB1 = -2.5IB2 = 2A RL = 200Ω
Value 1100 800
7 3 10 1.5 50 150 - 55 ~ 150
Min. 1100 800
7 800
Typ.
10 8
60 15
Units V V V A A A W °C °C
Max.
Units V V V V
10
µA
10
µA
40
2
V
1.5
V
pF
MHz
0.5
µs
3...