2SC5029
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC5029
Power Amplifier Applications Power Switchin...
2SC5029
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC5029
Power Amplifier Applications Power Switching Applications
Industrial Applications Unit: mm
Low saturation
voltage: VCE (sat) = 0.5 V (max) (IC = 1 A, IB = 0.05 A) High collector power dissipation: PC = 1.3 W High-speed switching: tstg = 1.0 μs (typ.) Complementary to 2SA1892
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 3 0.2 1.3 150 −55 to 150 Unit V V V A A W °C °C
JEDEC JEITA TOSHIBA
― ― 2-8M1A
Weight: 0.55 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2006-11-10
2SC5029
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter break...