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C5086 Datasheet

Part Number C5086
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SC5086
Datasheet C5086 DatasheetC5086 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 2SC5086 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 V 12 V .

  C5086   C5086






Part Number C5089
Manufacturers Toshiba
Logo Toshiba
Description 2SC5089
Datasheet C5086 DatasheetC5089 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5089 2SC5089 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base current IB 20 mA Collector current IC 40 mA Collector power dissipation PC 150 mW Junction temperature Tj.

  C5086   C5086







Part Number C5088
Manufacturers ETC
Logo ETC
Description NPN Transistor
Datasheet C5086 DatasheetC5088 Datasheet (PDF)

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

  C5086   C5086







Part Number C5087
Manufacturers Toshiba
Logo Toshiba
Description 2SC5087
Datasheet C5086 DatasheetC5087 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087 2SC5087 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 V 12 V .

  C5086   C5086







Part Number C5085
Manufacturers Toshiba
Logo Toshiba
Description 2SC5085
Datasheet C5086 DatasheetC5085 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5085 2SC5085 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 V 12 V .

  C5086   C5086







2SC5086

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 2SC5086 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 V 12 V 3 V 40 mA 80 mA 100 mW 125 °C −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-2H1A Weight: 2.4 mg (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ⎪S21e⎪2 (1) ⎪S21e⎪2 (2) NF (1) NF (2) VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 500 MHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 5 m.


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