2SC5100
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908) sAbsolute maximum ratings (Ta=25°C)
S...
2SC5100
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5100 160 120 6 8 3 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) 2SC5100 10max 10max 120min 50min∗ 0.5max 20typ 200typ V MHz
16.2
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=160V VEB=6V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.3A VCE=12V, IE=–0.5A VCB=10V, f=1MHz
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
Unit
µA
23.0±0.3
V
9.5±0.2
µA
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1
3.3
0.8
O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 40 RL (Ω) 10 IC (A) 4 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.4 IB2 (A) –0.4 ton (µs) 0.13typ tstg (µs) 3.50typ tf (µs) 0.32typ
3.35
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
350m
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation
Voltage V C E (s at) (V ) 3
I C – V BE Temperature Characteristics (Typical)
8 (V C E =4V)
A
8
0m
20
15
0m
A
A
1
A 00m
75 m A
Collector Current I C (A)
2
50m A
Collector Current I C (A)
6
6
4
4
mp)
mp)
Cas
˚C (
2
2
(Cas
I B =10mA
I C =8A 0 2A 0.6 4A 0.8 1.0 0 0
0
0
1
2
3
4
0
0.2
0.4
0.5
–30˚C
25˚C
125
(Case
1
e ...
