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C5108 Datasheet

Part Number C5108
Manufacturers Toshiba
Logo Toshiba
Description 2SC5108
Datasheet C5108 DatasheetC5108 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108 2SC5108 For VCO Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 V 10 V 3 V 15 mA 30 mA 100 mW 125 °C −55 to 125 °C Note: Using continuously under heavy loa.

  C5108   C5108






Part Number C5107
Manufacturers Toshiba
Logo Toshiba
Description 2SC5107
Datasheet C5108 DatasheetC5107 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5107 2SC5107 For VCO Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 V 10 V 3 V 15 mA 30 mA 100 mW 125 °C −55 to 125 °C Note: Using continuously under heavy loa.

  C5108   C5108







Part Number C5106
Manufacturers Toshiba
Logo Toshiba
Description 2SC5106
Datasheet C5108 DatasheetC5106 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5106 2SC5106 For VCO Application Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 10 3 15 30 150 125 −55 to 125 V V V mA mA mW °C °C Note: Using continuously under heavy loads (e.g. the application.

  C5108   C5108







Part Number C5104
Manufacturers Panasonic
Logo Panasonic
Description Silicon NPN Transistor
Datasheet C5108 DatasheetC5104 Datasheet (PDF)

Power Transistors 2SC5104 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 8.5±0.2 Unit: mm 3.4±0.3 6.0±0.2 1.0±0.1 ■ Features 3.0–+00..24 4.4±0.5 14.4±0.5 10.0±0.3 1.5±0.1 • High-speed switching 1.5–+00.4 • High collector-base voltage (Emitter open) VCBO • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • N type package enabling direct soldering of the radiating fin to the / printed circuit board, etc. o.

  C5108   C5108







Part Number C5103
Manufacturers ROHM Electronics
Logo ROHM Electronics
Description 2SC5103
Datasheet C5108 DatasheetC5103 Datasheet (PDF)

www.datasheet4u.com 2SC5103 Transistors High speed switching transistor (60V, 5A) 2SC5103 !Features 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 µs at IC = 3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952. !External dimensions (Units : mm) 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 5.1 6.5 C0.5 1.0 0.5 0.5 1.5 2.5 9.5 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emi.

  C5108   C5108







2SC5108

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108 2SC5108 For VCO Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 V 10 V 3 V 15 mA 30 mA 100 mW 125 °C −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC ― operating temperature/current/voltage, etc.) are within the JEITA ― absolute maximum ratings. Please design the appropriate reliability upon reviewing the TOSHIBA 2-2H1A Toshiba Semiconductor Reliability Handbook (“Handling Weight: 2.4 mg (typ.) Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1993-10 1 2014-03-01 2SC5108 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Transition frequency Insertion gain Output capacitance Reverse transfer capacitance Collector-base time constant ICBO VCB = 10 V, IE = 0 ⎯ .


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