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C5132A

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2SC5132A

2SC5132A Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output TO–3PFM (N) Fe...


Renesas

C5132A

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2SC5132A Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output TO–3PFM (N) Features www.DataSheet4U.com High breakdown voltage VCES = 1500 V, IC = 8 A Built–in damper diode type Isolated package TO-3PFM B C 1 E 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Diode current Note: 1. Value at Tc = 25°C Symbol VCES VEBO IC ic(surge) PC*1 Tj Tstg ID Ratings 1500 6 8 16 50 150 –55 to +150 6 Unit V V A A W °C °C A ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— 2SC5132A Electrical Characteristics (Ta = 25°C) Item Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio www.DataSheet4U.com Collector to emitter saturation Symbol V(BR)EBO ICES hFE VCE(sat) VBE(sat) VECF tf Min 6 Typ — Max — Unit V Test conditions IE = 400 mA, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A ——————————————————————————————————————————— ——————————————————————————————————————————— — ...




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