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C5198 Datasheet


TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications 2SC5198 Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit .

Toshiba Semiconductor
C5198.pdf

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Toshiba Semiconductor C5198 Datasheet
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications 2SC5198 Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V Collector current IC 10 A Base current IB 1 A Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range PC 100 W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-16C1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 4.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1994-06 1 2013-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter br.





Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS A1941 C5198 (9TW) (9TW) PNP NPN TO- 3PN Non Isolated Plastic Package Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise ) VALUE DESCRIPTION SYMBOL VCBO 160 Collector Base Volt.

CDIL
C5198.pdf

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CDIL C5198 Datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS A1941 C5198 (9TW) (9TW) PNP NPN TO- 3PN Non Isolated Plastic Package Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise ) VALUE DESCRIPTION SYMBOL VCBO 160 Collector Base Voltage V 160 Collector Emitter Voltage CEO VEBO 5.0 Emitter Base Voltage Collector Current Base Current Total Power Dissipation up to Tc=25ºC Junction Temperature Storage Temperature IC IB Ptot Tj Tstg 10 1 100 150 - 55 to +150 UNIT V V V A A W ºC ºC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) TEST CONDITION DESCRIPTION SYMBOL ICBO VCB=160V, IE=0 Collector Cut Off Current IEBO VEB =5V, IC =0 Emitter Cut Off Current Collector Emitter Voltage Collector Emitter Saturation Voltage Base Emitter On Voltage DC Current Gain Collector Output Capacitance VCEO VCE (sat) VBE (on) hFE Cob IC=1mA, IB =0 IC=7A, IB =0.7A IC=5A, VCE=5V *IC=1A, VCE=5V IC=5A, VCE=5V IE=0, VCB=10V ,f=1MHz A1941 C5198 IC=1A, VCE=5V 55 - 110 CDIL C5198 R MIN TYP MAX 5.0 5.0 UNIT µΑ µΑ V V V 160 2.0 1.5 200 55 35 480 220 30 pF MHz Transition Frequency * hFE Classification Marking fT R: CDIL A1941 R CDIL A1941 O O : 80 - 200 CDIL C5198 O A1941_C5198_9TWRev_2 250706E Continental Device India Limited Data Sheet Page 1 of 3 Free Datasheet http://www.Datasheet4U.com A1941 C5198 (9TW) (9TW) PNP NPN TO- 3PN Non Isolated Plastic Package A1941_C5198_9TWRev_2 250.





Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications 2SC5198 Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V Collector current IC 10 A Base current IB 1 A Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range PC 100 W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-16C1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 4.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1994-06 1 2013-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter br.



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