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C5422 Datasheet

Part Number C5422
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SC5422
Datasheet C5422 DatasheetC5422 Datasheet (PDF)

2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5422 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS l High Voltage l Low Saturation Voltage l High Speed : VCBO = 1700 V : VCE (sat) = 3 V (Max.) : tf = 0.15 µs (Typ.) Unit: mm MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYM Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature St.

  C5422   C5422






Part Number C5423
Manufacturers Panasonic
Logo Panasonic
Description 2SC5423
Datasheet C5422 DatasheetC5423 Datasheet (PDF)

Power Transistors 2SC5423 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1700 1700 600 5 30 15 10 100 3.5 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 www.DataSheet4U.com 5° 18.6±0.5 5° 5° s Absolute Ma.

  C5422   C5422







Part Number C5420
Manufacturers Sanyo
Logo Sanyo
Description 2SC5420
Datasheet C5422 DatasheetC5420 Datasheet (PDF)

Ordering number : EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features • High breakdown voltage (VCBO=1000V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. Package Dimensions unit: mm 2069B-SMP-FD [2SC5420] 10.2 4.5 1.3 2.7 3.0 8.8 1.2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current .

  C5422   C5422







2SC5422

2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5422 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS l High Voltage l Low Saturation Voltage l High Speed : VCBO = 1700 V : VCE (sat) = 3 V (Max.) : tf = 0.15 µs (Typ.) Unit: mm MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYM Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC I Pulse BOL VCBO VCEO VEBO C RATING 1700 V 600 5 15 30 7.5 A 200 150 ° −55~150 ° UNIT V V A ICP IB PC Tj Tstg JEDEC JEITA ― ― 2-21F2A W C C TOSHIBA Weight: 9.75 g (typ.) ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC S Collector Cut−off Current Emitter Cut−off Current Emitter−Base Breakdown Voltage DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Switching Time Storage Time Fall Time YMBOL ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob tstg tf TEST CONDITION VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 11 A IC = 11 A, IB = 2.75 A IC = 11 A, IB = 2.75 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 8 A, IB1 (end) = 1.4 A fH = 64 kHz MIN ― ― 600 10 4.5 ― ― ― ― 220 ― ― 2.5 0.15 0. TYP. ―1 ― 100 ― ― ― 8. ―3 1.0 2 1.5 ― ― pF 3.5 3 µs ―V 40 5 ― V V MHz MAX UNIT mA µA 1 2001-08-20 http.


2014-06-03 : GW40N120KD    STGW40N120KD    STGWA40N120KD    NTC-502F332F    NTC-502F347F    NTC-502F397F    NTC-103F343F    NTC-103F345F    NTC-103F397F    NTC-303F410F   


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