Power Transistors
2SC5902
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV
Unit: mm
■ Featu...
Power Transistors
2SC5902
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV
Unit: mm
■ Features
15.5±0.5 φ 3.2±0.1 5˚
3.0±0.3 5˚
(4.5)
26.5±0.5 (2.0)
(1.2) (10.0)
(23.4) 22.0±0.5
High breakdown
voltage: VCBO ≥ 1 700 V
Wide safe operation area
Built-in dumper diode
5˚
(4.0)
5˚
2.0±0.2
5˚
■ Absolute Maximum Ratings TC = 25°C
1.1±0.1
0.7±0.1
/ Parameter
Symbol Rating
Unit
18.6±0.5 (2.0)
Solder Dip
5.45±0.3
e Collector-base
voltage (Emitter open) VCBO
1 700
V
pe) Collector-emitter
voltage (E-B short) VCES
1 700
V
nc d ge. ed ty Emitter-base
voltage (Collector open) VEBO
7
3.3±0.3
(2.0)
5.5±0.3
V
sta tinu Base current
IB
3
A
a e cycle iscon Collector current
IC
9
A
life d, d Peak collector current *
ICP
14
A
n u duct type Collector power dissipation
PC
40
W
te tin Pro ed Ta=25°C
3
four ntinu Junction temperature
Tj
150
°C
ing isco Storage temperature
Tstg −55 to +150 °C
in n follow ned d Note) *: Non-repetitive peak collector current
10.9±0.5
5˚ 12 3
1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package
Internal Connection
C B
E
Ma iscocontinueindteinncalnucdeestype, pla ■ Electrical Characteristics TC = 25°C ± 3°C
/Dis ma Parameter
Symbol
Conditions
D ance type, Emitter-base
voltage (Collector open)
ten ce Forward
voltage Main tenan Collector-base cutoff current (Emitter open) d main Forward current transfer ratio (plane Collector-emitter saturation
voltage
VEBO VF ICBO...