CAB530M12BM3
1200 V, 530 A All-Silicon Carbide
Half-Bridge Module
VDS
1200 V
IDS
530 A
Technical Features
Package...
CAB530M12BM3
1200 V, 530 A All-Silicon Carbide
Half-Bridge Module
VDS
1200 V
IDS
530 A
Technical Features
Package 61.4 mm X 106.4 mm X 30 mm
Industry Standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Turn-off Tail Current from
MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum Nitride Insulator
Applications
Railway & Traction EV Charging Infrastructure Industrial Automation & Testing High-Frequency Power Supplies Renewable Energy Systems & Grid-Tied Inverters Active Front Ends & AC Inverters
System Benefits
Lightweight, Compact Form-Factor with 62mm-Format Enables System Retrofit Increased System Efficiency due to Low Switching & Conduction Losses of SiC
Maximum Parameters (Validated by Design)
Symbol Parameter
Min.
VDS max Drain-Source
Voltage
VGS max Gate-Source
Voltage, Maximum Value
-8
VGS op
Gate-Source
Voltage, Recommended Op. Value
-4
IDS DC Continuous Drain Current
ISD DC Source-Drain Current ISD BD DC Source-Drain Current (Body Diode) IDS (pulsed) Maximum Pulsed Drain-Source Current
ISD (pulsed) Maximum Pulsed Diode Current
Maximum Virtual Junction
TVJ op Temperature under Switching
-40
Conditions
Typ. Max. Unit
Test Conditions
1200
+19 V Transient, <100 ns
+15
Static
Note
Fig. 32
719
VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C Fig. 20
541
VGS = 15 V, TC = 90 ˚C, TVJ ≤ 175 ˚C
719
VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C
442
A VGS = -4 V, TC = 25 ˚C, TVJ ≤ 175 ˚C
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