DatasheetsPDF.com

CAT28C65B Datasheet

Part Number CAT28C65B
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description 64K-Bit CMOS PARALLEL EEPROM
Datasheet CAT28C65B DatasheetCAT28C65B Datasheet (PDF)

64K-Bit CMOS PARALLEL EEPROM CAT28C65B FEATURES s Fast read access times: – 90/120/150ns s Low power CMOS dissipation: – Active: 25 mA max. – Standby: 100 µA max. s Simple write operation: – On-chip address and data latches – Self-timed write cycle with auto-clear s Fast write cycle time: – 5ms max s CMOS and TTL compatible I/O s Hardware and software write protection s Commercial, industrial and automotive temperature ranges s Automatic page write operation: – 1 to 32 bytes in 5ms – Page loa.

  CAT28C65B   CAT28C65B






Part Number CAT28C65B
Manufacturers Catalyst Semiconductor
Logo Catalyst Semiconductor
Description 64K-Bit CMOS PARALLEL E2PROM
Datasheet CAT28C65B DatasheetCAT28C65B Datasheet (PDF)

CAT28C65B 64K-Bit CMOS PARALLEL E2PROM FEATURES s Fast Read Access Times: s Commercial, Industrial and Automotive – 120/150ns s Low Power CMOS Dissipation: Temperature Ranges s Automatic Page Write Operation: – Active: 25 mA Max. – Standby: 100 µA Max. s Simple Write Operation: – 1 to 32 Bytes in 5ms – Page Load Timer s End of Write Detection: – On-Chip Address and Data Latches – Self-Timed Write Cycle with Auto-Clear s Fast Write Cycle Time: – Toggle Bit – DATA Polling – RDY/BUSY s 100,00.

  CAT28C65B   CAT28C65B







64K-Bit CMOS PARALLEL EEPROM

64K-Bit CMOS PARALLEL EEPROM CAT28C65B FEATURES s Fast read access times: – 90/120/150ns s Low power CMOS dissipation: – Active: 25 mA max. – Standby: 100 µA max. s Simple write operation: – On-chip address and data latches – Self-timed write cycle with auto-clear s Fast write cycle time: – 5ms max s CMOS and TTL compatible I/O s Hardware and software write protection s Commercial, industrial and automotive temperature ranges s Automatic page write operation: – 1 to 32 bytes in 5ms – Page load timer s End of write detection: – Toggle bit – DATA polling – RDY/BUSY s 100,000 program/erase cycles s 100 year data retention DESCRIPTION The CAT28C65B is a fast, low power, 5V-only CMOS parallel EEPROM organized as 8K x 8-bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle with auto-clear and VCC power up/down write protection eliminate additional timing and protection hardware. DATA Polling, a RDY/BUSY pin and Toggle status bits signal the start and end of the self-timed write cycle. Additionally, the CAT28C65B features hardware and software write protection. The CAT28C65B is manufactured using Catalyst’s advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles and has a data retention of 100 years. The device is available in JEDECapproved 28-pin DIP, 28-pin TSOP, 28-pin SOIC or 32pin PLCC packages. BLOCK DIAGRAM A5–A12 ADDR. BUFFER & LATCHES VCC CE OE WE INADVERTENT WR.


2022-07-14 : NV24C512MUW    NV24C64LV    NV24C64MUW    NV24M01MUW    NV25040    NV25020    NV25010    NV25040LV    NV25020LV    NV25010LV   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)