CBR10-010P SERIES
SILICON BRIDGE RECTIFIERS 10 AMP, 100 THRU 1000 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION...
CBR10-010P SERIES
SILICON BRIDGE RECTIFIERS 10 AMP, 100 THRU 1000 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR10-010P series devices are silicon, single phase, full wave bridge rectifiers designed for general purpose applications. The molded epoxy case has a built-in metal baseplate for heat sink mounting. The device utilizes standard 0.25” FASTON terminals.
CASE FP
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL -010P
Peak Repetitive Reverse
Voltage
VRRM 100
DC Blocking
Voltage
VR 100
RMS Reverse
Voltage
VR(RMS) 70
Average Forward Current (TC=60°C)
IO
Peak Forward Surge Current
IFSM
I2t Rating for Fusing (1ms
Voltage (case to lead)
Operating and Storage Junction Temperature
Thermal Resistance
Viso
TJ, Tstg ΘJC
CBR10 -040P -060P
400 600 400 600 280 420
10 200 160 2500
-65 to +150 1.9
-080P 800
800
560
-100P 1000
1000
700
UNITS V V V A A A2s
Vac
°C °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP MAX
IR VR=Rated VRRM
10
IR VR=Rated VRRM, TA=125°C
500
VF IF=5.0A
1.2
CJ VR=4.0V, f=1.0MHz
300
UNITS μA μA V
pF
R3 (24-June 2013)
CBR10-010P SERIES SILICON BRIDGE RECTIFIERS 10 AMP, 100 THRU 1000 VOLT
CASE FP - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R3 (24-June 2013)
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