CBR35-080P

CBR35-010P SERIES SILICON BRIDGE RECTIFIERS 35 AMP, 100 THRU 1000 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR35-010P series devices are silicon, single phase, full wave bridge rectifiers designed for general purpose applications. The molded epoxy case has a built-in metal baseplate for heat sink mounting. The device utilizes standard 0.25” FASTON terminals. CASE FP MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL -010P Peak Repetitive Reverse Voltage VRRM 100 DC Blocking Voltage VR 100 RMS Reverse Voltage VR(RMS) 70 Average Forward Current (TC=60°C) IO Peak Forward Surge Current IFSM I2t Rating for Fusing (1msVoltage (case to lead) Operating and Storage Junction Temperature Thermal Resistance Viso TJ, Tstg ΘJC CBR35 -040P -060P 400 600 400 600 280 420 35 400 660 2500 -65 to +150 1.4 -080P 800 800 560 -100P 1000 1000 700 UNITS V V V A A A2s Vac °C °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX IR VR=Rated VRRM 10 IR VR=Rated VRRM, TA=125°C 500 VF IF=17.5A 1.2 CJ VR=4.0V, f=1.0MHz 300 UNITS μA μA V pF R3 (24-June 2013) CBR35-010P SERIES SILICON BRIDGE RECTIFIERS 35 AMP, 100 THRU 1000 VOLT CASE FP - MECHANICAL OUTLINE MARKING: FULL PART NUMBER w w w. c e n t r a l s e m i . c o m R3 (24-June 2013) ...