CBRHD SERIES
SURFACE MOUNT SILICON HIGH DENSITY 0.5 AMP
BRIDGE RECTIFIER
w w w. c e n t r a l s e m i . c o m
DESCRIPT...
CBRHD SERIES
SURFACE MOUNT SILICON HIGH DENSITY 0.5 AMP
BRIDGE RECTIFIER
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHD series devices are silicon full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips.
MARKING CODES: CBRHD-02: CBD2 CBRHD-06: CBD6
CBRHD-04: CBD4 CBRHD-10: CBD10
HD DIP CASE
FEATURES: Efficient use of board space: requires only 42mm2 of
board space vs. 120mm2 of board space needed for
industry standard 1.0 Amp surface mount bridge rectifier.
50% higher density (Amps/mm2) than the industry standard 1.0 Amp surface mount bridge rectifier.
Glass passivated chips for high reliability.
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL
Peak Repetitive Reverse
Voltage
VRRM
DC Blocking
Voltage
VR
RMS Reverse
Voltage
VR(RMS)
Average Forward Current (TA=40°C) (Note 1)
IO
Average Forward Current (TA=40°C) (Note 2)
IO
Peak Forward Surge Current
IFSM
Operating & Storage Junction Temperature
TJ, Tstg
-02 200
200
140
CBRHD -04 -06 400 600 400 600 280 420
0.5 0.8 30 -65 to +150
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP MAX
IR VR=Rated VRRM
5.0
IR VR=Rated VRRM, TA=125°C
500
VF IF=400mA
1.0
CJ VR=4.0V, f=1.0MHz
20
Notes: (1) Mounted on Glass-Epoxy PCB. (2) Mounted on Ceramic PCB.
-10* 1000
1000
700
UNITS V V V A A A °C
UNITS μA μA V pF
* Available on special order, please consu...