CBS05F30

Schottky Barrier Diode Silicon Epitaxial CBS05F30 1. Applications High-Speed Switching 2. Features (1) Low forward voltage: VF(3) = 0.38 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit CBS05F30 1: Cathode 2: Anode CST2B 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Reverse voltage VR  30 V Average rectified current IO (Note 1) 500 mA Non-repetitive peak forward surge current IFSM (Note 2) 3 A Junction temperature Tj  125  Storage temperature Tstg  -55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a glass-epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm. Note 2: Measured with a 10 ms pulse. Start of commercial production 2010-12 1 2014-02-24 Rev.5.0 5. Electrical Characteristics (Unless otherwise specified, Ta = 25) CBS05F30 Characteristics F...