DatasheetsPDF.com

CBSL6 Datasheet

Part Number CBSL6
Manufacturers Advanced Semiconductor
Logo Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Datasheet CBSL6 DatasheetCBSL6 Datasheet (PDF)

CBSL6 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL6 is Designed for PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R .115 .430 D E .125 G H I L F C B 2XØ.130 FEATURES: • • • Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCES VEBO PDISS TJ TSTG θ JC 2.4 A DIM MINIMUM inches / mm J K MAXIMUM inches / mm 50 V 35 V 3.5 V 53 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 3.3 OC/W O O A B C D E F G H I J K L .355 / 9.02 .115 / 2.92 .075 / 1.91 .225 / 5.72 .090 / 2.29 .720.

  CBSL6   CBSL6






Part Number CBSL60B
Manufacturers Advanced Semiconductor
Logo Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Datasheet CBSL6 DatasheetCBSL60B Datasheet (PDF)

CBSL60B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL60B is Designed for PACKAGE STYLE .450 BAL FLG (A) .060x45° B A FULL R .100x45° C D F FEATURES: • Input Matching Network • • Omnigold™ Metalization System E P G H K J M L N MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O DIM A B MINIMUM inches / mm MAXIMUM inches / mm 8.0 A 60 V 28 V 3.5 V 146 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 1.2 OC/W O O .055 / 1.40 .120 / 3.05 .130 / 3.30 .785 / 19.94 .455 / 11.56.

  CBSL6   CBSL6







Part Number CBSL30B
Manufacturers Advanced Semiconductor
Logo Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Datasheet CBSL6 DatasheetCBSL30B Datasheet (PDF)

CBSL30B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL30B is Designed for PACKAGE STYLE .250 BAL FLG .020 x 45° B A Ø.130 NOM. .050 x 45° E D C N FEATURES: • • • Omnigold™ Metalization System F H I J G MAXIMUM RATINGS IC VCBO VCES VEBO PDISS TJ TSTG θ JC 5.0 A 48 V 45 V 4.0 V 43 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 3.0 OC/W O O O DIM A B C D E F G H I J K L M N .245 / 6.22 .555 / 14.10 .739 / 18.77 .315 / 8.00 .002 / 0.05 .055 / 1.40 .075 1.91 .243 / 6.17 .630 / 16.00.

  CBSL6   CBSL6







Part Number CBSL30
Manufacturers Advanced Semiconductor
Logo Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Datasheet CBSL6 DatasheetCBSL30 Datasheet (PDF)

CBSL30 DESCRIPTION: NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R C B 2XØ.130 .115 .430 D E .125 G H I J K L F The ASI CBSL30 is Designed for FEATURES: • • • Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O 7.5 A 48V 25 V 3.5 V 88 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 3.0 OC/W O DIM A B C D E F G H I J K L MINIMUM inches / mm MAXIMUM inches / mm .355 / 9.02 .115 / 2.92 .075 / 1.91 .225 / 5.72 .090 / 2.29 .720 .

  CBSL6   CBSL6







Part Number CBSL150
Manufacturers Advanced Semiconductor
Logo Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Datasheet CBSL6 DatasheetCBSL150 Datasheet (PDF)

CBSL150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL150 is Designed for 900 MHz Class AB Cellular Base Station Amplifiers. PACKAGE STYLE .400 BAL FLG (C) FEATURES: • Internal Input/Output Matching • PG = 9.0 dB Typ. at 150 W/ 900 MHz • Omnigold™ Metalization System E D C .1925 F H I N L J DIM A MINIMUM inches / mm .080x45° A B FULL R (4X).060 R M G MAXIMUM RATINGS IC VCEO VCES VEBO PDISS TJ TSTG θ JC 25 A 28 V 60 V 3.5 V 300 W @ TC = 25 C -65 OC to +200 OC -65 OC to +150 OC.

  CBSL6   CBSL6







NPN SILICON RF POWER TRANSISTOR

CBSL6 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL6 is Designed for PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R .115 .430 D E .125 G H I L F C B 2XØ.130 FEATURES: • • • Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCES VEBO PDISS TJ TSTG θ JC 2.4 A DIM MINIMUM inches / mm J K MAXIMUM inches / mm 50 V 35 V 3.5 V 53 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 3.3 OC/W O O A B C D E F G H I J K L .355 / 9.02 .115 / 2.92 .075 / 1.91 .225 / 5.72 .090 / 2.29 .720 / 18.29 .970 / 24.64 .355 / 9.02 .004 / 0.10 .120 / 3.05 .160 / 4.06 .230 / 5.84 .365 / 9.27 .125 / 3.18 .085 / 2.16 .235 / 5.97 .110 / 2.79 .730 / 18.54 .980 / 24.89 .365 / 9.27 .006 / 0.15 .130 / 3.30 .180 / 4.57 .260 / 6.60 ORDER CODE: ASI10580 CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICEO ICBO hFE COB PG ηC IC = 5 mA IC = 5 mA IE = 5 mA VCE = 24 V VCB = 24 V VCE = 10 V VCB = 24 V TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 24 50 3.5 1.0 1.0 UNITS V V V mA mA --pF dB % IC = 0.1 A f = 1.0 MHz ICQ = 25 mA f = 960 MHz 20 100 8.5 VCC = 24 V POUT = 6.0 W 10 50 --- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 .


2005-03-23 : 2N2857CSM    2N2880    2N2891    2N2894    2N2894    2N2894    2N2894A    2N2894ACSM    2N2894CSM    2N2894DCSM   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)