Silicon Schottky Barrier Diode Bondable Chips and Beam Leads
DATA SHEET
Silicon Schottky Barrier Diode Bondable Chips and Beam Leads
Applications
Detectors Mixers
Features
Ava...
Description
DATA SHEET
Silicon Schottky Barrier Diode Bondable Chips and Beam Leads
Applications
Detectors Mixers
Features
Available in both P-type and N-type low barrier designs Low 1/f noise Large bond pad chip design Planar passivated beam-lead and chip construction
Description
Skyworks beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also available.
Beam-lead and chip diodes can be mounted on special customer substrates.
Unmounted beam-lead diodes are especially well suited for use in microwave integrated circuit (MIC) applications. Mounted beamlead diodes can be ...
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