Silicon Schottky Barrier Diodes
DATA SHEET
Silicon Schottky Barrier Diodes in Hermetic and Epoxy Ceramic Packages
Applications
Detectors Mixers
Fea...
Description
DATA SHEET
Silicon Schottky Barrier Diodes in Hermetic and Epoxy Ceramic Packages
Applications
Detectors Mixers
Features
Available in both P-type and N-type low barrier designs Low 1/f noise Packages rated MSL1, 260 C per JEDEC J-STD-020
Description
Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also available.
Packaged diodes are suitable for use in waveguide, coaxial, and stripline applications.
The choice of N- and P-type silicon allows the designer to optimize the silicon material for the intended application:
Doppler mixers and high-sensitivity detect...
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