CDBD2040-G

Chip Schottky Barrier Rectifier CDBD2020-G Thru. CDBD20200-G Reverse Voltage: 20 to 200 Volts Forward Current: 20.0 Amp RoHS Device Features -Batch process design, excellent power dissipation offers better reverse leakage optimize board space. current and thermal resistance. 0.046(1.20) 0.032(0.80) 0.402(10.20) 0.386(9.80) 0.185(4.70) 0.169(4.30) 0.055(1.40) 0.047(1.20) D2PAK -Low profile surface mounted application in order to -Low power loss, high efficiency. -High current capability, low forward voltage drop. -High surge capability. -Guardring for overvoltage protection. -Ultra high-speed switching. -Silicon epitaxial planar chip, metal silicon junction. -Lead-free parts meet environmental standards of MIL-STD-19500 /228 2 0.370(9.40) 0.354(9.00) 0.012(0.30) 0.004(0.10) 0.024(0.60) 0.016(0.40) 1 0.192(4.8) 0.176(4.4) 3 0.063(1.60) 0.055(1.40) 0.108(2.70) 0.205(5.20) 0.189(4.80) 0.092(2.30) Mechanical data -Case: TO-263/D2PAK, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. Dimensions in inches and (millimeters) -Polarity: Indicated by cathode band. -Weunting Position: Any -Weight:1.46 gram(approx.). PIN 1 PIN 3 PIN 2 Maximum Ratings (At Ta=25°C, unless otherwise noted) Parameter Repetitive peak reverse voltage Continuous reverse voltage RMS voltage Maximum Forward rectified current (See fig. 1) Maximum forward voltage IF=10.0A Maxium Forward surge current, 8.3ms singlehalf sine-wave superimposed on rate load (JEDEC method) MaximumReverse cu...