CDBDSC5650-G Datasheet





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CDBDSC5650-G Datasheet - Silicon Carbide Power Schottky Diode

CDBDSC5650-G   CDBDSC5650-G  

Datasheet: CDBDSC5650-G datasheet

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Description: Silicon Carbide Power Schottky Diode CDB DSC5650-G Reverse Voltage: 650 V Forwar d Current: 5 A RoHS Device Features - Rated to 650V at 5 Amps - Short recover y time - High speed switching possible - High frequency operation. - High temp erature operation. - Temperature indepe ndent switching behaviour. - Positive t emperature coefficient on VF Circuit Di agram C(3) 0.409(10.40) 0.394(10.00) 0 .244(6.20) 0.236(6.00) D-PAK(TO-252) 0.264(6.70) 0.256(6.50) 0.215(5.46) 0.2 01(5.10) 3 Φ 0.051(1.30) 0.043(1.10) 1 2 0.023(0.58) 0.018(0.46) 0.012(0.30) Max. 0.091(2.32) 0.089(2.28) 0.093(2. 37) 0.085(2.16) 0.034(0.86) 0.026(0.66 ) 0.090(2.29) 0.035(0.89) 0.114(2.90) 0.100(2.55) 0.023(0.58) 0.016(0.43)


Manufacture Part Number Description

Comchip

CDBDSC5650-G

Silicon Carbide Power Schottky Diode




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