CDBDSC8650-G Datasheet (data sheet) PDF





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CDBDSC8650-G Datasheet - Silicon Carbide Power Schottky Diode

CDBDSC8650-G   CDBDSC8650-G  

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Silicon Carbide Power Schottky Diode CDB DSC8650-G Reverse Voltage: 650 V Forwar d Current: 8 A RoHS Device Features - Rated to 650V at 8 Amps - Short recover y time - High speed switching possible - High frequency operation. - High temp erature operation. - Temperature indepe ndent switching behaviour. - Positive t emperature coefficient on VF Circuit D iagram C(3) 0.409(10.40) 0

Manufacture Part Number Description

Comchip

CDBDSC8650-G

Silicon Carbide Power Schottky Diode




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