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CDBER0230L Datasheet

Part Number CDBER0230L
Manufacturers Comchip
Logo Comchip
Description SMD Schottky Barrier Diode
Datasheet CDBER0230L DatasheetCDBER0230L Datasheet (PDF)

SMD Schottky Barrier Diode SMD Diodes Specialist CDBER0230L (RoHS Device) Io = 200 mA V R = 30 Volts 0503(1308) 0.053(1.35) 0.045(1.15) Features Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0.034(0.85) 0.026(0.65) Mechanical data 0.030(0.75) Case: 0503(1308) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BA Mounting position: Any Wei.

  CDBER0230L   CDBER0230L






Part Number CDBER0230R
Manufacturers Comchip
Logo Comchip
Description SMD Schottky Barrier Diode
Datasheet CDBER0230L DatasheetCDBER0230R Datasheet (PDF)

SMD Schottky Barrier Diode SMD Diodes Specialist CDBER0230R (RoHS Device) Io = 200 mA V R = 30 Volts 0503(1308) 0.053(1.35) 0.045(1.15) Features Low reverse current. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0.034(0.85) 0.026(0.65) Mechanical data 0.030(0.75) Case: 0503(1308) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BB Mounting position: Any Wei.

  CDBER0230L   CDBER0230L







SMD Schottky Barrier Diode

SMD Schottky Barrier Diode SMD Diodes Specialist CDBER0230L (RoHS Device) Io = 200 mA V R = 30 Volts 0503(1308) 0.053(1.35) 0.045(1.15) Features Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0.034(0.85) 0.026(0.65) Mechanical data 0.030(0.75) Case: 0503(1308) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BA Mounting position: Any Weight: 0.002 gram(approx.). 0.022(0.55) Typ. 0.024(0.60) 0.016(0.40) Typ. Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit V RRM VR IO 35 30 200 V V mA 8.3ms single half sine-wave superimposed on rate load(JEDEC method) I FSM T STG Tj -40 1 +125 +125 A O C C O Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Forward voltage Reverse current I F = 200 mA V R = 10 V Conditions Symbol Min Typ Max Unit VF IR 0.5 30 V uA REV:A QW-A1099 Page 1 Comchip Technology CO., LTD. Free Datasheet http://www.datasheet4u.com/ SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBER0230L) Fig. 1 - Forward characteristics 1000 1m Fig. 2 - Reverse characteristics 100 Reverse current ( A ) Forward cu.


2013-12-23 : SI8220    SI8221    SI8230    SI8231    SI8233    SI8234    SI8232    SI8235    SI8236    SI8241   


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