SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBER40 (RoHs Device)
Io = 200 mA V R = 40 Volts Features
Low reverse ...
SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBER40 (RoHs Device)
Io = 200 mA V R = 40 Volts Features
Low reverse current. Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction.
0.034(0.85) 0.026(0.65)
0503(1308)
0.053(1.35) 0.045(1.15)
Mechanical data
Case: 0503(1308) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.002 gram(approx.).
0.022(0.55) Typ. 0.016(0.40) Typ. 0.030(0.75) 0.024(0.60)
Dimensions in inches and (millimeter)
Maximum Rating (at T A =25 C unless otherwise noted)
O
Parameter
Peak reverse
voltage Reverse
voltage RMS reverse
voltage Average forward rectified current Forward current,surge peak Power dissipation Storage temperature Junction temperature
Conditions
Symbol Min Typ Max Unit
V RM VR V R(RMS) IO 40 40 28 200 0.6 150 -65 +125 +125 V V V mA A mW
O
8.3 ms single half sine-wave superimposed on rate load(JEDEC method)
I FSM PD T STG Tj
C C
O
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Forward
voltage Reverse current Capacitance between terminals Reverse recovery time I F = 1mA I F = 40mA V R = 30V
Conditions
Symbol Min Typ Max Unit
VF IR CT T rr 0.38 1 0.2 5 5 V uA pF nS
f = 1 MHz, and 0 VDC reverse
voltage I F =I R =10mA,Irr=0.1xIR,RL=100 ohm
REV:A
QW-A1090
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