SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBER54 (RoHs Device)
Io = 200 mA V R = 30 Volts Features
Low forward voltage. Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction.
0.034(0.85) 0.026(0.65)
0503(1308)
0.053(1.35) 0.045(1.15)
Mechanical data
Case: 0503(1308) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.002 gra.
SMD Schottky Barrier Diode
SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBER54 (RoHs Device)
Io = 200 mA V R = 30 Volts Features
Low forward voltage. Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction.
0.034(0.85) 0.026(0.65)
0503(1308)
0.053(1.35) 0.045(1.15)
Mechanical data
Case: 0503(1308) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.002 gram(approx.).
0.022(0.55) Typ. 0.016(0.40) Typ. 0.030(0.75) 0.024(0.60)
Dimensions in inches and (millimeter)
Maximum Rating (at T A =25 C unless otherwise noted)
O
Parameter
Peak reverse voltage Reverse voltage RMS reverse voltage Average forward rectified current Repetitive peak forward current Forward current,surge peak Power dissipation Storage temperature Junction temperature
Conditions
Symbol Min Typ Max Unit
V RM VR V R(RMS) IO I FRM 30 30 21 200 0.3 0.6 150 -65 +125 +125 V V V mA A A mW
O
8.3 ms single half sine-wave superimposed on rate load(JEDEC method)
I FSM PD T STG Tj
C C
O
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Forward voltage I F = 0.1mA I F = 1mA I F = 10mA I F = 30mA I F = 100mA V R = 25V
Conditions
Symbol Min Typ Max Unit
VF 0.24 0.32 0.4 0.5 1 2 10 5 V
Reverse current Capacitance between terminals Reverse recovery time
IR CT T rr
uA pF nS
REV:A
f = 1 MHz, and 1 VDC reverse voltage I F =I R =10mA,Irr=0.1xIR,RL=100 .