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CDBER54 Datasheet

Part Number CDBER54
Manufacturers Comchip
Logo Comchip
Description SMD Schottky Barrier Diode
Datasheet CDBER54 DatasheetCDBER54 Datasheet (PDF)

SMD Schottky Barrier Diode SMD Diodes Specialist CDBER54 (RoHs Device) Io = 200 mA V R = 30 Volts Features Low forward voltage. Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. 0.034(0.85) 0.026(0.65) 0503(1308) 0.053(1.35) 0.045(1.15) Mechanical data Case: 0503(1308) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.002 gra.

  CDBER54   CDBER54






SMD Schottky Barrier Diode

SMD Schottky Barrier Diode SMD Diodes Specialist CDBER54 (RoHs Device) Io = 200 mA V R = 30 Volts Features Low forward voltage. Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. 0.034(0.85) 0.026(0.65) 0503(1308) 0.053(1.35) 0.045(1.15) Mechanical data Case: 0503(1308) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.002 gram(approx.). 0.022(0.55) Typ. 0.016(0.40) Typ. 0.030(0.75) 0.024(0.60) Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Peak reverse voltage Reverse voltage RMS reverse voltage Average forward rectified current Repetitive peak forward current Forward current,surge peak Power dissipation Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit V RM VR V R(RMS) IO I FRM 30 30 21 200 0.3 0.6 150 -65 +125 +125 V V V mA A A mW O 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) I FSM PD T STG Tj C C O Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Forward voltage I F = 0.1mA I F = 1mA I F = 10mA I F = 30mA I F = 100mA V R = 25V Conditions Symbol Min Typ Max Unit VF 0.24 0.32 0.4 0.5 1 2 10 5 V Reverse current Capacitance between terminals Reverse recovery time IR CT T rr uA pF nS REV:A f = 1 MHz, and 1 VDC reverse voltage I F =I R =10mA,Irr=0.1xIR,RL=100 .


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