CDBGBSC101200-G Datasheet (data sheet) PDF





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CDBGBSC101200-G Datasheet - Dual Silicon Carbide Power Schottky Diode

CDBGBSC101200-G   CDBGBSC101200-G  

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Dual Silicon Carbide Power Schottky Diod e CDBGBSC101200-G Reverse Voltage: 1200 V Forward Current: 10A RoHS Device Fea tures - Rated to 1200 at 10 Amps - Shor t recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperatu re independent switching behaviour. - P ositive temperature coefficient on VF C ircuit diagram C(4) A(1) A(3

Manufacture Part Number Description

Comchip

CDBGBSC101200-G

Dual Silicon Carbide Power Schottky Diode




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