CDBGBSC201200-G Datasheet (data sheet) PDF





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CDBGBSC201200-G Datasheet - Dual Silicon Carbide Power Schottky Diode

CDBGBSC201200-G   CDBGBSC201200-G  

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Dual Silicon Carbide Power Schottky Diod e CDBGBSC201200-G Reverse Voltage: 120 0V Forward Current: 20A RoHS Device Fe atures - Rated to 1200 at 20 Amps - Sho rt recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperat ure independent switching behaviour. - Positive temperature coefficient on VF 0.244(6.20) 0.213(5.40) 0.8

Manufacture Part Number Description

Comchip

CDBGBSC201200-G

Dual Silicon Carbide Power Schottky Diode




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