CDBJFSC10650-G Datasheet





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CDBJFSC10650-G Datasheet - Silicon Carbide Power Schottky Diode

CDBJFSC10650-G   CDBJFSC10650-G  

Datasheet: CDBJFSC10650-G datasheet

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Description: Silicon Carbide Power Schottky Diode CDB JFSC10650-G Reverse Voltage: 650 V Forw ard Current: 10 A RoHS Device Features - Rated to 650V at 10 Amps - Short rec overy time. - High speed switching poss ible. - High frequency operation. - Hig h temperature operation. - Temperature independent switching behaviour. - Posi tive temperature coefficient on VF. Ci rcuit diagram K(3) K(1) A(2) TO-220F 0.404(10.25) 0.388( 9.85) 0.130(3.30 ) 0.118(3.00) 0.112(2.85) 0.100(2.55) 0.264(6.70) 0.248(6.30) 0.039(1.00) 0.0 24(0.60) 0.055(1.40) 0.043(1.10) 0.031( 0.80) 0.020(0.50) 0.602(15.30) 0.587(1 4.90) 0.154(3.90) 0.130(3.30) 0.539(13. 70) 0.516(13.10) 0.201(5.10) 0.100(2. 55) 0.126(3.20) 0.118(3.00) 0.185(4


Manufacture Part Number Description

Comchip

CDBJFSC10650-G

Silicon Carbide Power Schottky Diode




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