CDBJFSC10650-G

Silicon Carbide Power Schottky Diode CDBJFSC10650-G Reverse Voltage: 650 V Forward Current: 10 A RoHS Device Features - Rated to 650V at 10 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220F 0.404(10.25) 0.388( 9.85) 0.130(3.30) 0.118(3.00) 0.112(2.85) 0.100(2.55) 0.264(6.70) 0.248(6.30) 0.039(1.00) 0.024(0.60) 0.055(1.40) 0.043(1.10) 0.031(0.80) 0.020(0.50) 0.602(15.30) 0.587(14.90) 0.154(3.90) 0.130(3.30) 0.539(13.70) 0.516(13.10) 0.201(5.10) 0.100(2.55) 0.126(3.20) 0.118(3.00) 0.185(4.70) 0.173(4.40) 0.110(2.80) 0.098(2.50) 0.031(0.80) 0.020(0.50) Dimensions in inches and (millimeter) Maximum Rating (at TA=25°C unless otherwise noted) Parameter Repetitive peak reverse voltage Surge peak reverse voltage DC blocking voltage Typical continuous forward current Repetitive peak forward surge current Non-repetitive peak forward surge current Power dissipation Typical thermal resistance Operating junction temperature range Storage temperature range Conditions TC = 120°C Tc = 25°C, tp = 10ms Half sine wave, D = 0.3 Tc = 25°C, tp = 10ms Half sine wave TC = 25°C TC = 110°C Junction to case Symbol VRRM VRSM VDC IFRM IFSM PTOT RθJC TJ TSTG Value 650 650 650 10 50 100 39.4 17.1 3.81 -55 ~ +175 -55 ~ +175 Company reserves the right to improve product design , functions and rel...