Silicon Carbide Power Schottky Diode
CDBJFSC5650-G
Reverse Voltage: 650 V Forward Current: 5 A RoHS Device
Features
- R...
Silicon Carbide Power Schottky Diode
CDBJFSC5650-G
Reverse
Voltage: 650 V Forward Current: 5 A RoHS Device
Features
- Rated to 650V at 5 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF.
Circuit diagram
K(3)
K(1) A(2)
TO-220F
0.404(10.25) 0.388( 9.85)
0.130(3.30) 0.118(3.00)
0.112(2.85) 0.100(2.55)
0.264(6.70) 0.248(6.30)
0.039(1.00) 0.024(0.60)
0.055(1.40) 0.043(1.10)
0.031(0.80) 0.020(0.50)
0.602(15.30) 0.587(14.90)
0.154(3.90) 0.130(3.30)
0.539(13.70) 0.516(13.10)
0.201(5.10)
0.100(2.55)
0.126(3.20) 0.118(3.00)
0.185(4.70) 0.173(4.40)
0.110(2.80) 0.098(2.50)
0.031(0.80) 0.020(0.50)
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25°C unless otherwise noted)
Parameter
Conditions
Repetitive peak reverse
voltage
Surge peak reverse
voltage
DC blocking
voltage
Typical continuous forward current Repetitive peak forward surge current Non-repetitive peak forward surge current
Power dissipation Typical thermal resistance
Tc = 150°C
Tc = 25°C, tp = 10ms Half sine wave, D = 0.3 Tc = 25°C, tp = 10ms Half sine wave
Tc = 25°C
Tc = 110°C
Junction to case
Operating junction temperature range
Storage temperature range
Symbol VRRM VRSM VDC IF IFRM IFSM
PTOT
RθJC TJ TSTG
Value 650 650 650
5 30
60 30.9 13.4 4.85 -55 ~ +175 -55 ~ +175
Company reserves the right to improve product design , functions an...